An Novel Thin Layer SOI copyright-Stored Trench LIGBT With Enhanced Emitter Injection
An novel thin layer SOI copyright-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed.The potential of the P-shield layer is clamped by two series-connected diodes.Therefore, the reverse voltage is sustained click here by the P-shield/Ndrift junction rather than the P-base/CS junction